H643 datasheet(1/2 Pages) HUASHAN

Part #	H643

Description	NPN SILICON TRANSISTOR

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Manufacturer	HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]

Direct Link	http://www.huashan.com.cn

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Shantou Huashan Electronic Devices Co.,Ltd.

█ APPLICATIONS

Low frequency power amplifier

█ ABSOLUTE MAXIMUM RATINGS（T

a=25℃）

█ ELECTRICAL CHARACTERISTICS（T

a=25℃）

Symbol　

Characteristics　

Min　

Typ　

Max　

Unit　

Test Conditions　

BVCBO

Collector-Base Breakdown Voltage

－４０　

Ｖ　

IC=-100μA, IE=0

BVCEO

Collector-Emitter Breakdown Voltage

－２０　

Ｖ　

IC=-10mA, IB=0　

BVEBO

Emitter-Base Breakdown Voltage

－５　

Ｖ　

IE=-10μA，IC=0

ICBO

Collector Cut-off Current

－２００　ｎＡ　 VCB=-25V, IE=0

IEBO

Emitter Cut-off Current

－２００　ｎＡ　 VEB=-3V, IC=0

HFE　

DC Current Gain　

４０　

４００　

VCE=-1V, IC=-100mA　

VCE(sat)　 Collector- Emitter Saturation Voltage　

－０．３　－０．４　

Ｖ　

IC=-500mA, IB=-50mA　

VBE(sat)　 Base-Emitter Saturation Voltage　

－１．０　－１．３　

Ｖ　

IC=-500mA, IB=-50mA　

█ hFE Classification

R

O

Y

G

40— 80

70— 140

120— 240

200—400

Tstg——Storage Temperature………………………… -55~150℃

Tj——Junction Temperature…………………………………150℃

PC——Collector Dissipation…………………………………500mW

VCBO——Collector-Base Voltage………………………………-40V

VCEO——Collector-Emitter Voltage……………………………-20V

VEBO ——Emitter-Base Voltage………………………………-5V

IC——Collector Current……………………………………-500mA

1―Emitter，E

2―Base，B

3―Collector，C

TO-92

H643

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H643 Datasheet(PDF) 1 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

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