H950 datasheet(1/2 Pages) HUASHAN

Part #	H950

Description	PNP SILICON TRANSISTOR

PDF	2 Pages

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Manufacturer	HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]

Direct Link	http://www.huashan.com.cn

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1 / 2 page

Shantou Huashan Electronic Devices Co.,Ltd.

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Applications

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Package

Audio Frequency Amplifier Applications

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Features

● Complementary to 2SC1627.

● Suitable for driver of 20~25 watts audio amplifiers.

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ABSOLUTE MAXIMUM RATINGS（Ta=25℃）

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ELECTRICAL CHARACTERISTICS（Ta=25℃）

Symbol

Characteristics

Min

Typ

Max

Unit

Test Conditions

BVCEO

Collector-Emitter Breakdown Voltage

-80

V

IC=-5mA, IB=0

HFE（1）

DC Current Gain

70

240

VCE=-2V, IC=-50mA

HFE（2）

DC Current Gain

40

VCE=-2V, IC=-200mA

VCE(sat)

Collector- Emitter Saturation Voltage

-0.4

V

IC=-200mA, IB=-20mA

VBE

Base-Emitter Voltage

-0.55

-0.8

V

VCE=-2V, IC=-5mA

ICBO

Collector Cut-off Current

-100

nA

VCB=-50V, IE=0

IEBO

Emitter Cut-off Current

-100

nA

VEB=-5V, IC=0

fT

Current Gain-Bandwidth Product

70

100

MHz

VCE=-10V, IC=-10mA

Cob

Output Capacitance

14

pF

VCB=-10V, IE=0，f=1MHz

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hFE Classification

O

Y

70—140

120—240

H817

PNP S I L I C O N T R A N S I S T O R

Tstg——Storage Temperature………………………… -55~150℃

Tj——Junction Temperature…………………………………150℃

PC——Collector Dissipation…………………………………600mW

VCBO——Collector-Base Voltage………………………………-80V

VCEO——Collector-Emitter Voltage……………………………-80V

VEBO——Emitter-Base Voltage………………………………-5V

IC——Collector Current………………………………………-300mA

Ib——Base Current……………………………………………-60mA

1―Emitter，E

2―Collector，C

3―Base，B

TO-92

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H950 Datasheet(PDF) 1 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

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