SI2305DS datasheet(2/4 Pages) VISHAY

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Si2305DS

Vishay Siliconix

www.vishay.com

S FaxBack 408-970-5600

2-2

Document Number: 70833

S-56947—Rev. C, 28-Dec-98

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Limits

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = –10 mA

–8

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = –250 mA

–0.45

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

Zero Gate Voltage Drain Current

IDSS

VDS = –6.4 V, VGS = 0 V

–1

Zero Gate Voltage Drain Current

IDSS

VDS = –6.4 V, VGS = 0 V, TJ = 55_C

–10

On-State Drain Currenta

ID(on)

VDS v –5 V, VGS = –4.5 V

–6

On-State Drain Currenta

ID(on)

VDS v –5 V, VGS = –2.5 V

–3

DiS

VGS = –4.5 V, ID = –3.5 A

0.044

0.052

Drain-Source On-Resistancea

rDS(on)

VGS = –2.5 V, ID = –3 A

0.060

0.071

VGS = –1.8 V, ID = –2 A

0.087

0.108

Forward Transconductancea

gfs

VDS = –5 V, ID = –3.5 A

8.5

Diode Forward Voltage

VSD

IS = –1.6 A, VGS = 0 V

–1.2

Dynamicb

Total Gate Charge

V4 V V

4 5 V

Gate-Source Charge

Qgs

VDS = –4 V, VGS = –4.5 V

ID ^ –3.5 A

Gate-Drain Charge

Qgd

ID ^ 3.5 A

Input Capacitance

Ciss

V4 V V

0 f

1 MH

1245

Output Capacitance

Coss

VDS = –4 V, VGS = 0, f = 1 MHz

375

Reverse Transfer Capacitance

Crss

210

Switchingb

Turn-On Time

td(on)

V4 V R

Turn-On Time

VDD = –4 V, RL = 4 W

ID ^ –1.0 A, VGEN = –4.5 V

Turn-Off Time

td(off)

ID ^ –1.0 A, VGEN = –4.5 V

RG = 6 W

Turn-Off Time

Notes

For DESIGN AID ONLY, not subject to production testing.

Pulse test: PW

v300 ms duty cycle v2%.

Switching time is essentially independent of operating temperature.

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