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HC106D Datasheet(PDF) 2 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

Part # HC106D
Description  Sensitive Gate Silicon Controlled Rectifier
PDF  3 Pages
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Manufacturer  HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]
Direct Link  http://www.huashan.com.cn
Logo HUASHAN - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

HC106D Datasheet(HTML) 2 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

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Shantou Huashan Electronic Devices Co.,Ltd.
HC106D
█ Electrical Characteristics（T
C=25℃ unless otherwise specified）
Symbol
Items
Min.
Typ.
Max.
Unit
Conditions
IDRM
or
IRRM
Peak Repetitive Forward or
Reverse Blocking Current.
10
100
uA
VAK=Rated VDRM or VRRM
RKG=1000 ohms
Tj=25℃
Tj=110℃
VTM
Peak Forward On-State Voltage (1)
2.2
V
IFM=1A
IGT
Gate Trigger Current（2）
15
35
200
500
uA
VAK =6V(DC), RL=100 ohms
Tj=25℃
Tj=-40℃
VGT
Gate Trigger Voltage (2)
0.4
0.5
0.6
0.75
0.8
1.0
V
VAK =6V(DC), RL=100 ohms
Tj=25℃
Tj=-40℃
VGRM
Peak Reverse Gate Voltage
6.0
V
IGR=10 uA
VGD
Gate Non-Trigger Voltage
0.2
V
VAK =12V, RL=100 ohms
Tj=110℃
IH
Holding Current
0.19
0.33
0.07
3.0
6.0
2.0
mA
Initiating current=20mA,
Gate open, VD =12V(DC)
Tj=25℃
Tj=-40℃
Tj=110℃
IL
Latching Current
0.2
0.35
5.0
mA
VAK =12V, IG=20mA
Tj=25℃
Tj=-40℃
Rth(j-c)
Thermal Resistance
3.0
℃/W
Junction to Case
Rth(j-a)
Thermal Resistance
75
℃/W
Junction to Ambient
TL
Maximum Lead Temperature for
Soldering Purpose 1/8’’,from case
for 10 Seconds
260
℃
dv/dt
Critical Rate-of-Rise Off-state
Voltage
8.0
V/µs
VAK= RatedVDRM ,Exponential
waveform , RGK=1000 ohms
Gate open
Tj=110℃
(1) Pulse Test : Pulse Width ≤2.0ms,Duty Cycle≤2%
(2) RGK is not included in measurement



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