HC323T datasheet(1/1 Pages) HUASHAN

Part #	HC323T

Description	NPN SILICON TRANSISTOR

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Manufacturer	HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]

Direct Link	http://www.huashan.com.cn

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Shantou Huashan Electronic Devices Co.,Ltd.

█ APPLICATIONS

Switching Circuit，Interface Circuit．

█ ABSOLUTE MAXIMUM RATINGS（T

a=25℃）

█ ELECTRICAL CHARACTERISTICS（T

a=25℃）

Symbol　

Characteristics　

Min　

Typ　

Max　

Unit　

Test Conditions　

BVCBO

Collector-Base Breakdown Voltage

３０　

Ｖ　

IC=50μA, IE=0

BVCEO

Collector-Emitter Breakdown Voltage

１５　

Ｖ　

IC=1mA, IB=0　

BVEBO

Emitter-Base Breakdown Voltage

５　

Ｖ　

IE=50μA，IC=0

ICBO

Collector Cut-off Current

０．５　

μA　 VCB=20V, IE=0

IEBO

Emitter Cut-off Current

０．５　

μA　 VEB=4V, IC=0

HFE　

DC Current Gain　

１００　

２５０　

６００　

VCE=5V, IC=50mA　

VCE(sat)　 Collector- Emitter Saturation Voltage　

４０　

８０　

ｍＶ　

IC=50mA, IB=2.5mA　

ＶＩ（ｏｆｆ）　 Input Off Voltage

０．４　０．５５　０．８　

Ｖ　

VCE=5V, IC=0.1mA　

ＶＩ（ｏｎ） Input On Voltage

０．６　

０．８　

１．５　

Ｖ　

VCE=0.2V, IC=10mA

R1

Input Resistor

１．６４　２．２　２．８６　ＫΩ　　

fT

Current Gain-Bandwidth Product

２００　

ＭＨｚ　

VCE=10V,IC=50mA,f=100ＭＨｚ

Tstg——Storage Temperature………………………… -55~150℃

Tj——Junction Temperature…………………………………150℃

PC——Collector Dissipation…………………………………300mW

VCBO——Collector-Base Voltage………………………………30V

VCEO——Collector-Emitter Voltage……………………………15V

VEBO ——Emitter -Base Voltage………………………………5V

IC——Collector Current………………………………………600mA

1―Emitter，E

2―Collector,C

3―Base，B

TO-92S

HC323T

N PN DIGITAL TRANSISTOR

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