HC2344 datasheet(1/3 Pages) HUASHAN

Part #	HC2344

Description	NPN SILICON TRANSISTOR

PDF	3 Pages

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Manufacturer	HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]

Direct Link	http://www.huashan.com.cn

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Shantou Huashan Electronic Devices Co.,Ltd.

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APPLICATIONS

High Voltage switching，AF Power Amp.

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ABSOLUTE MAXIMUM RATINGS（Ta=25℃）

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ELECTRICAL CHARACTERISTICS（Ta=25℃）

Symbol

Characteristics

Min

Typ

Max

Unit

Test Conditions

BVCBO

Collector-Base Breakdown Voltage

180

V

IC=1mA, IE=0

BVCEO

Collector-Emitter Breakdown Voltage

160

V

IC=1mA, IB=0

BVEBO

Emitter-Base Breakdown Voltage

6

V

IE=1mA，IC=0

ICBO

Collector Cutoff Current

10

μA

VCB=120V, IE=0

IEBO

Emitter-Base Cutoff Current

10

μA

VEB=4V, IC=0

HFE

DC Current Gain

60

200

VCE=5V, IC=300mA

VCE(sat)

Collector- Emitter Saturation Voltage

0.3

1.0

V

IC=500mA, IB=50mA

VBE

Base- Emitter Voltage

1.5

V

VCE=5V,IC=10A

Cob

Output Capacitance

23

pF

VCB=10V, f=1MHz

fT

Current Gain-Bandwidth Product

100

MHz

VCE=10V,IC=50mA，

ton

Turn-On Time

0.15

μS

tf

Fall Time

0.48

μS

tstg

Storage Time

0.81

μS

See specified test circuit

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hFE Classification

D

E

60—120

100—200

NPN SILICON TRANSISTOR

Tstg——Storage Temperature………………………… -55~150℃

Tj——Junction Temperature……………………………… 150℃

PC——Collector Dissipation（Tc=25℃）…………………… 25W

VCBO——Collector-Base Voltage………………………… 180V

VCEO——Collector-Emitter Voltage……………………… 160V

VEBO——Emitter-Base Voltage…………………………………6V

IC——Collector Current（DC）……………………………… 1.5A

ICP——Collector Current（Pulse）……………………………3A

HC2344

1―Base，B

2―Collector，C

3―Emitter, E

TO-220

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HC2344 Datasheet(PDF) 1 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

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