HD882S datasheet(1/1 Pages) HUASHAN

Part #	HD882S

Description	NPN SILICON TRANSISTOR

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Manufacturer	HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]

Direct Link	http://www.huashan.com.cn

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Shantou Huashan Electronic Devices Co.,Ltd.

█ AUDIO FREQUENCY POWER AMPLIFIER

LOW SPEED SWITCHING

█ ABSOLUTE MAXIMUM RATINGS（T

a=25℃）

█ ELECTRICAL CHARACTERISTICS（T

a=25℃）

Symbol　

Characteristics　

Min　

Typ　

Max　

Unit　

Test Conditions　

ICBO

Collector Cut-off Current

１００　

ｎＡ　 VCB=30V, IE=0

IEBO

Emitter Cut-off Current

１００　

ｎＡ　 VEB=3V, IC=0

HFE　

DC Current Gain　

１００　

４９０　

VCE=2V,

IC=1A　

VCE(sat)

Collector Emitter Saturation Voltage

０．５　

Ｖ　

IC=2 A , IB=0.2A

VBE(sat)　

Base-Emitter Saturation Voltage　

２．０　

Ｖ　

IC=2A, IB=0.2A　

fT

Current Gain- Bandwidth Product

８０　

ＭＨｚ　 VCE=5V, IC=0.1A

Cob

Output Capacitance

５５　

ｐＦ　

VCB=10V, IE=0 ,f=1ＭＨｚ

█ hFE Classification

Q

P

E

１００—２００　　

１６０—３２０　　

２６０—４９０　　

Tstg——Storage Temperature………………………… -55~150℃

Tj——Junction Temperature…………………………………150℃

PC——Collector Dissipation…………………………………0.75W

VCBO——Collector-Base Voltage………………………………40V

VCEO——Collector-Emitter Voltage……………………………30V

VEBO —— Emitter - Base Voltage……………………………5V

I C—— Collector Current…………………………………… 3 A

1―Emitter，E

2―Collector，C

3―Base，B

TO-92

HD882S

N PN S I L I C O N T R A N S I S T O R

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