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HFF640 Datasheet(PDF) 1 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD |
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HFF640 Datasheet(HTML) 1 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD |
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1 / 5 page  Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONSL High Voltage High-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS（T a=25℃） █ ELECTRICAL CHARACTERISTICS（T a=25℃） Symbol Characteristic s Min Typ Max Unit Test Conditions BVDSS Drain-Source Breakdown Voltage 200 V ID=250μA ,VGS=0V IDSS Zero Gate Voltage Drain Current １０ μＡ VDS =200V，VGS=0 IGSS Gate –Source Leakage Current ±100 ｎＡ VGS=±20V , VDS =0V VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS , ID =250μA RDS(on) Static Drain-Source On-Resistance ０．１４５ ０．１８ ? VGS=10V, ID =9A gfs Forward Transconductance １３ S VDS = 40V , ID =9A* Ciss Input Capacitance １３００ １７００ pF Coss Output Capacitance 175 230 pF VDS =25V, VGS=0,f=1ＭＨｚ Crss Reverse Transfer Capacitance 45 60 pF td(on) Turn - On Delay Time 20 50 nS tr Rise Time 145 300 nS td(off) Turn - Off Delay Time 145 300 nS tf Fall Time 110 230 nS VDD =100V, ID =18A RG= 25 Ω * Qg Total Gate Charge 45 58 nC VDS =0.8VDSS Qgs Gate–Source Charge 6.5 nC ＶＧＳ＝１０Ｖ Qgd Gate–Drain Charge 22 nC ＩＤ＝１８Ａ ＊ Is Continuous Source Current １８ Ａ VSD Diode Forward Voltage １．５ Ｖ IS =18A , VGS=0 Rth（j-c） Thermal Resistance， Junction-to-Case ２．８９ ℃／Ｗ *Pulse Test：Pulse Width≤300μs，Duty Cycle≤2% N-Channel MOSFET T stg ——Storage Temperature……………………………－55~150℃ Tj ——Operating Junction Temperature …………………………150℃ PD —— Allowable Power Dissipation（Tc=25℃）…………………43W VDSS —— Drain-Source Voltage ………………………………… 200V VDGR —— Drain-Gate Voltage (RGS=1MΩ) ……………………200V VGSS —— Gate-Source Voltage …………………………………±20V ID —— *Drain Current（T c=25℃）…………………………………18A * Drain current limited by maximumjunction temperature HFF640 1―G 2―D 3―S TO-220F 1 |
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