HFP640 datasheet(2/6 Pages) HUASHAN

2 / 6 page

Shantou Huashan Electronic Devices Co.,Ltd.

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Electrical Characteristics（Ta=25℃ unless otherwise specified）

Symbol

Items

Min.

Typ.

Max.

Unit

Conditions

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

200

ID=250µA ,VGS=0V

µA

VDS =200V, VGS=0V

IDSS

Zero Gate Voltage Drain Current

250

µA

VDS =160V, VGS=0V,Tj=125℃

IGSS

Gate – Body Leakage

±100

VGS= ±20V , VDS =0V

On Characteristics

VGS(th)

Gate Threshold Voltage

2.0

4.0

VDS = VGS , ID=250µA

RDS(on)

Static Drain-Source On-Resistance

0.18

Ω

VGS=10V, ID=9A

gFS

Forward Transconductance

4.3

VDS=40V, ID=9A (Note 1)

Dynamic Characteristics and Switching Characteristics

Ciss

Input Capacitance

1700

Coss

Output Capacitance

230

Crss

Reverse Transfer Capacitance

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

td(on)

Turn - On Delay Time

Rise Time

300

td(off)

Turn - Off Delay Time

300

Fall Time

230

VDD = 100 V, ID = 18Apk

RG= 25 Ω (Note 1,2)

Total Gate Charge

Qgs

Gate–Source Charge

6.5

Qgd

Gate–Drain Charge

VDS=0.8VDSS, ID=18A,

VGS = 10 V (Note 1,2)

Drain-Source Diode Characteristics and Maximun Ratings

Continuous Source–Drain Diode

Forward Current

ISM

Pulsed

Drain-Source

Diode

Forward Current

VSD

Source–Drain

Diode

Forward

On–Voltage

1.5

IS=18A,VGS=0

Notes:

1. Pulse Test: Pulse width≤300μS,Duty cycle≤2%

2. Essentially independent of operating temperature

HFP640

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