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2SC1047 Datasheet(PDF) 1 Page - Wing Shing Computer Components |
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2SC1047 Datasheet(HTML) 1 Page - Wing Shing Computer Components |
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1 / 1 page ![]() GENERAL DESCRIPTION High frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose QUICK REFERENCE DATA LIMITING VALUES SYMBOL PARAMETER CONDITIONS TYP MAX UNIT V CESM Collector-emitter voltage peak value V BE = 0V - 160 V V CEO Collector-emitter voltage (open base) - 140 V I C Collector current (DC) - 12 A I CM Collector current peak value - A P tot Total power dissipation T mb 25 - 100 W V CEsat Collector-emitter saturation voltage I C = 4.0A; IB = 0.4A - 3 V V F Diode forward voltage I F = 4.0A 1.5 2.0 V t f Fall time I C=4.0A,IB1=-IB2=0.4A,VCC=60V 0.35 1.0 s SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V CESM Collector-emitter voltage peak value V BE = 0V - 160 V V CEO Collector-emitter voltage (open base) - 140 V V EBO Emitter-base oltage (open colloctor) 6 V I C Collector current (DC) - 12 A I B Base current (DC) - 3 A P tot Total power dissipation Tmb 25 - 100 W T stg Storage temperature -55 150 T j Junction temperature - 150 SYMBOL PARAMETER CONDITIONS TYP MAX UNIT I CBO Collector-base cut-off current V CB=160V - 0.2 mA I EBO Emitter-base cut-off current V EB=5V - 0.2 mA V (BR)CEO Collector-emitter breakdown voltage I C=1mA 140 V V CEsat Collector-emitter saturation voltages I C = 4.0A; IB = 0.4A - 2 V h FE DC current gain I C = 1A; VCE = 5V 50 200 f T Transition frequency at f = 5MHz I C = 1A; VCE = 12V 5 - MHz C c Collector capacitance at f = 1MHz V CB = 10V,f=1MHZ 210 - pF t on On times I C=4A,IB1=-IB2=0.4A,VCC=60V us t s Tum-off storage time I C=4A,IB1=-IB2=0.4A,VCC=60V us t f Fall time I C=4A,IB1=-IB2=0.4A,VCC=60V 0.35 1.0 us ELECTRICAL CHARACTERISTICS MT-100 Wing Shing Computer Components Co., (H.K .)L td. Tel: (852)234 1 92 76 Fax : (852)279 7 8153 Homepage: http: / / www.wingshing.com E-mail: wsccltd@hk star.com 2SC1047 Silicon Epitaxial Planar Transistor |
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