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2SC2922 Datasheet(PDF) 1 Page - Wing Shing Computer Components |
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2SC2922 Datasheet(HTML) 1 Page - Wing Shing Computer Components |
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1 / 1 page  GENERAL DESCRIPTION High frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose QUICK REFERENCE DATA LIMITING VALUES SYMBOL PARAMETER CONDITIONS TYP MAX UNIT VCBO Collector-emitter voltage peak value VBE = 0V - 180 V VCEO Collector-emitter voltage (open base) - 180 V IC Collector current (DC) - 17 A ICM Collector current peak value - A Ptot Total power dissipation Tmb 25 - 200 W VCEsat Collector-emitter saturation voltage IC = 8.0A; IB = 0.8A - 3V VF Diode forward voltage IF = 8.0A 1.5 2.0 V tf Fall time IC=8A,IB1=-IB2=1A,VCC=40V 0.45 1.0 s SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V - 180 V VCEO Collector-emitter voltage (open base) - 180 V VEBO Emitter-base oltage (open colloctor) 5 V IC Collector current (DC) - 17 A IB Base current (DC) - 5 A Ptot Total power dissipation Tmb 25 -200 W Tstg Storage temperature -55 150 Tj Junction temperature - 150 SYMBOL PARAMETER CONDITIONS TYP MAX UNIT ICBO Collector-base cut-off current VCB=180V - 0.2 mA IEBO Emitter-base cut-off current VEB=5V - 0.2 mA V(BR)CEO Collector-emitter breakdown voltage IC=1mA 180 VCEsat Collector-emitter saturation voltages IC = 8A; IB = 0.8A - 2 V hFE DC current gain IC = 2A; VCE = 5V 50 200 fT Transition frequency at f = 5MHz IC = 2A; VCE = 12V 10 - MHz Cc Collector capacitance at f = 1MHz VCB = 10V,f=1MHZ 250 - pF ton On times IC=8A.IB1=-IB2=1A,VCC=40V 0.2 us ts Tum-off storage time IC=8A.IB1=-IB2=1A,VCC=40V 1.5 us tf Fall time IC=8A.IB1=-IB2=1A,VCC=40V 0.45 1.0 us ELECTRICAL CHARACTERISTICS MT-200 Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153 Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com 2SC2922 Silicon Epitaxial Planar Transistor |
Similar Part No. - 2SC2922 |
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Similar Description - 2SC2922 |
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