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2009 ROHM Co., Ltd. All rights reserved.

2009.12 - Rev.C

General purpose small signal amplifier (50V, 0.15A)

2SC4617EB



Features



Dimensions (Unit : mm)

2) Complements the 2SA1774EB.



Structure

NPN silicon epitaxial

planar transistor



Absolute maximum (Ta=25

C)

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Range of storage temperature

Parameter

Tj

Tstg

60

V

V

V

mA

mW

°C

°C

50

7

150

200

150

150

−55 to +150

Symbol

Limits

Unit

∗1

∗1 Pw=1ms Single pulse

∗2 Each terminal mounted on a recommended land

∗2



Electrical characteristics (Ta=25

C)

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current gain

Output capacitance

Parameter

Symbol

Cob

Min.

50

60

7

−

−

−

120

−

−

−

−

−

−

−

−

−

180

2

−

−

−

100

100

400

390

−

3.5

μA

μA

−2mA, f=100MHz

V

V

nA

nA

mV

−

MHz

pF

Typ.

Max.

Unit

Conditions

Transition frequency

Rank

Q

R

120 to 270

180 to 390

(1) Base

(2) Emitter

(3) Collector

Each lead has same dimensions

1.6

0.26

0.5 0.5

1.0

(1)

(2)

(3)

0.7

0.13

EMT3F

Abbreviated symbol : B

∗