ARF521

165V, 150W, 150MHz

The ARF521 is an RF power transistor designed for high voltage operation in

broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz.

• Specified 125 Volt, 81MHz Characteristics:

Output Power = 150 Watts.

Gain = 13dB (Class AB)

Efficiency = 50%

• High Voltage Breakdown and Large SOA

for Superior Ruggedness.

• Industry Standard Package

• Low Vth Thermal Coefficient

Symbol

Parameter

ARF521

Unit

V

DSS

Drain-Source Voltage

500

V

I

D

Continuous Drain Current @ T

10

A

V

GS

Gate-Source Voltage

±30

V

P

D

Total Device Dissipation @ T

250

W

T

Operating and Storage Junction Temperature Range

-55 to 175

°C

T

L

Lead Temperature: 0.063” from Case for 10 Sec.

300

Maximum Ratings

All Ratings: T

Static Electrical Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

V

(BR)DSS

Drain-Source Breakdown Voltage (V

500

V

V

DS(ON)

0.56

0.8

Ω

I

DSS

Zero Gate Voltage Drain Current (V

25

μA

Zero Gate Voltage Drain Current (V

250

I

GSS

Gate-Source Leakage Current (V

±100

nA

g

fs

Forward Transconductance (V

3

3.6

mhos

V

GS(TH)

Gate Threshold Voltage (V

2

4

Volts

Microsemi Website - http://www.microsemi.com

Thermal Characteristics

Symbol

Characteristic

Min

Typ

Max

Unit

R

Junction to Case Thermal Resistance

0.60

°C/W

R

0.1

CAUTION:

These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

RF POWER MOSFET

N-CHANNEL ENHANCEMENT MODE