ARF1510 datasheet(1/2 Pages) MICROSEMI

Part #	ARF1510

Description	RF POWER MOSFET FULL-BRIDGE

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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1 / 2 page

D1

S1D2

G1

G2

S2

D3

G3

S3D4

G4

S4

MAXIMUM RATINGS

All Ratings: T

C = 25°C unless otherwise speciﬁed.

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

V

DS(ON)

I

DSS

I

GSS

g

fs

V

isolation

V

GS(TH)

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS = 0V, ID = 250 μA)

On State Drain Voltage 1 (I

D(ON) = 3.25A, VGS = 10V)

Zero Gate Voltage Drain Current (V

DS = 1000V, VGS = 0V)

Zero Gate Voltage Drain Current (V

DS = 800V, VGS = 0V, TC = 125°C)

Gate-Source Leakage Current (V

GS = ±30V, VDS = 0V)

Forward Transconductance (V

DS = 25V, ID = 3.25A)

RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute)

Gate Threshold Voltage (V

DS = VGS, ID = 50mA)

MIN

TYP

MAX

1000

6.8

7.5

25

250

±100

3

4

TBD

3

5

UNIT

Volts

μA

nA

mhos

Volts

Symbol

V

DSS

I

D

V

GS

P

D

T

J,TSTG

T

L

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

C = 25°C

Gate-Source Voltage

Total Device Dissipation @ T

C = 25°C

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

ARF 1510

1000

8

±30

1500

-55 to 175

300

UNIT

Volts

Amps

Volts

Watts

°C

RF POWER MOSFET

FULL-BRIDGE

400V

750W

40MHz

The ARF1510 is four RF power transistor arranged in an H-Bridge conﬁguration. It is intended for off-line 300V

operation in high power scientiﬁc, medical and, industrial RF power generator and ampliﬁer applications up to 40

MHz.

• Speciﬁed 300 Volt, 27.12 MHz Characteristics:

•

Output Power = 750 Watts.

•

Gain = 17dB (Class D)

• High Performance Power RF Package.

• Very High Breakdown for Improved Ruggedness.

• Low Thermal Resistance.

• Nitride Passivated Die for Improved Reliability.

• RoHS Compliant

ARF1510

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

θJHS

Characteristic (per package unless otherwise noted)

Junction to Case

Junction to Sink (Use High Efﬁciency Thermal Joint Compound and Planar Heat Sink Surface.)

MIN

TYP

MAX

0.10

0.16

UNIT

°C/W

Volts

ARF1510

D1

S1D2

G1

G2

S2

D3

G3

S3D4

G4

S4

Microsemi Website - http://www.microsemi.com

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed

.

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