ARF1519 datasheet(1/4 Pages) MICROSEMI

Part #	ARF1519

Description	RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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1 / 4 page

MAXIMUM RATINGS

All Ratings: T

C = 25°C unless otherwise speciﬁed.

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

V

DS(ON)

I

DSS

I

GSS

g

fs

V

isolation

V

GS(TH)

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS = 0V, ID = 300μA)

On State Drain Voltage 1 (I

D(ON) = 10A, VGS = 10V)

Zero Gate Voltage Drain Current (V

DS = 1000V, VGS = 0V)

Zero Gate Voltage Drain Current (V

DS = 800V, VGS = 0V, TC = 125°C)

Gate-Source Leakage Current (V

GS = ±30V, VDS = 0V)

Forward Transconductance (V

DS = 15V, ID = 10A)

RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute)

Gate Threshold Voltage (V

DS = VGS, ID = 6mA)

MIN

TYP

MAX

1000

5

7

300

3000

±600

3

14

TBD

2

4

UNIT

Volts

μA

nA

mhos

Volts

Symbol

V

DSS

I

D

V

GS

P

D

T

J,TSTG

T

L

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

C = 25°C

Gate-Source Voltage

Total Device Dissipation @ T

C = 25°C

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

ARF1519

1000

20

±30

1350

-55 to 175

300

UNIT

Volts

Amps

Volts

Watts

°C

RF POWER MOSFET

N - CHANNEL ENHANCEMENT MODE

250V

750W

25MHz

The ARF1519 is an RF power transistor designed for very high power scientiﬁc, commercial, medical and industrial

RF power generator and ampliﬁer applications up to 25 MHz.

• Speciﬁed 250 Volt, 13.56 MHz Characteristics:

•

Output Power = 750 Watts.

•

Gain = 17dB (Class C)

•

Efﬁciency > 75%

• High Performance Power RF Package.

• Very High Breakdown for Improved Ruggedness.

• Low Thermal Resistance.

• Nitride Passivated Die for Improved Reliability.

ARF1519

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

θCS

Characteristic (per package unless otherwise noted)

Junction to Case

Case to Sink (Use High Efﬁciency Thermal Joint Compound and Planar Heat Sink Surface.)

MIN

TYP

MAX

0.13

0.09

UNIT

°C/W

Volts

ARF1519

BeO

104T-100

Microsemi Website - http://www.microsemi.com

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed

.

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