Microsemi reserves the right to change, without notice, the specifications and information contained herein.

GENERAL DESCRIPTION

The DME 150 is a high power COMMON BASE bipolar transistor. It is

designed for pulsed systems in the frequency band 1025-1150 MHz. The

device has gold thin-film metallization and diffused ballasting for proven

highest MTTF. The transistor includes input and ouput prematch for

broadband capabilit. Low thermal resistance package reduces junction

temperature, extends life.

CASE OUTLINE

55AY, STYLE 1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25

290 Watts

Maximum Voltage and Current

BVces

Collector to Base Voltage

55 Volts

BVebo

Emitter to Base Voltage

4.0 Volts

Ic

Collector Current

15 Amps

Maximum Temperatures

Storage Temperature

- 65 to + 150

Operating Junction Temperature

+ 150

ELECTRICAL CHARACTERISTICS @ 25

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Pout

Pin

Pg

VSWR

Power Out

Power Input

Power Gain

Collector Efficiency

Load Mismatch Tolerance

F = 1025-1150 MHz

Vcc = 50 Volts

PW = 10

µsec

DF = 1%

F = 1025 MHz

150

7.8

8.3

40

25

20:1

Watts

Watts

dB

%

BVebo

BVces

Emitter to Base Breakdown

Collector to Emitter Breakdown

DC - Current Gain

Thermal Resistance

Ie = 15 mA

Ic = 25 mA

Ic = 250 mA, Vce = 5 V

4.0

55

20

100

0.6

Volts

Volts

Note 1: At rated output power and pulse conditions

2: At rated pulse conditions

Rev A January 2009

DME 150

150 Watts, 50 Volts, Pulsed

Avionics 1025 - 1150 MHz