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JTDB25

25 Watts, 36 Volts, Pulsed

Avionics, 960-1215 MHz

GENERAL DESCRIPTION

The JTDB25 is a high power COMMON BASE bipolar transistor.

It is

designed for pulsed systems in the frequency band 960-1215 MHz. The device

has gold thin-film metallization and diffused ballasting for proven highest

MTTF.

The transistor includes input and output prematch for broadband

capability.

Low thermal resistance package reduces junction temperature,

extends life.

ABSOLUTE MAXIMUM RATINGS

97W

Maximum Voltage and Current

55V

3.5V

5.0A

Maximum Temperatures

Storage Temperature

-65 to +200ºC

Operating Junction Temperature

+200ºC

CASE OUTLINE

55AW-1

ELECTRICAL CHARACTERISTICS @ 25

°C

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Emitter – Base Breakdown

3.5

V

Collector – Emitter Breakdown

55

V

DC – Current Gain

20

1

Thermal Resistance

1.8

ºC/W

FUNCTIONAL CHARACTERISTICS @ 25

°C

Pout

Power Output

F=960-1215 MHz

25

W

Pin

Power Input

Vcc = 36V

5

W

Gain

Power Gain

Pulse width = 10µs

7.0

7.5

RL

Return Loss

DF=40%

8

dB

Load Mismatch Tolerance

F = 1090 MHz

5:1

NOTES:1. At Rated Pulse Conditions

2. At Rated Output Power

Rev A: Dec 2009