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MP6250 Datasheet(PDF) 1 Page - Microsemi Corporation

Part # MP6250
Description  GaAs Flip Chip PIN Diodes
PDF  2 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

MP6250 Datasheet(HTML) 1 Page - Microsemi Corporation

  MP6250 Datasheet HTML 1Page - Microsemi Corporation MP6250 Datasheet HTML 2Page - Microsemi Corporation  
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MP6250 – P2715
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
GaAs Flip Chip PIN Diodes
TM
®
Copyright
 2008
Rev: 2009-01-19
Dimensions
Size: 27.5 x 15 mils
Thickness: 5 mils
Bond Pad Size: 3.5 x 8.4 mils
Features
Low Capacitance (45 fF Typ.)
Low Series Resistance (5
 Typ.)
2 Nanosecond Switching Speed
Silicon Nitride Passivation
Large Gold Bond Pads
Specifications @ 25°C
V
F (10 mA): 1.45 V Max.
V
R (10 A): 40 V Min.
R
S (10 mA, 1 GHz): 7  Max., 5  Typ.
C
T (10 V, 1 MHz): 55 fF Max., 45 fF Typ.
Maximum Ratings
Description
The MP6250 is a GaAs Flip Chip PIN Diode designed
for use in microwave and millimeterwave switches,
attenuators and phase shifters. GaAs PIN diodes feature
low zero bias capacitance and conductance, fast
switching speed and its ability to be driven directly by
low-cost TTL drivers.
These flip chip PIN diodes incorporate Microsemi’s
expertise in GaAs material processing, silicon nitride
protective coatings and high temperature metalization.
The flip chip design maintains the high frequency
performance features of a beam lead structure in a more
rugged surface mount configuration.
Incident Power
+23 dBm @ 25°C
Reverse Voltage
40 V
Power Dissipation
50 mW @ 25°C
Operating Temperature
-65°C to +150°C
Storage Temperature
-65°C to +150°C


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