Microsemi reserves the right to change, without notice, the specifications and information contained herein.

MS3022

1 Watts, 28 Volts

Class-C, CW 1.0 to 2.0 GHz

GENERAL DESCRIPTION

The MS3022 is a common base silicon NPN transistor designed for Class-C

general purpose microwave applications. The device is capable of withstanding an

infinite load VSWR under rated conditions. The MS3022 is particularly suited for

microwave communication links in the 1.0 to 2.0 GHz frequency ranges.

Features

• GOLD METALLIZATIOM

• P

• G

• COMMON BASE

CASE OUTLINE

.250 2LFL M210

(Common Base)

ABSOLUTE MAXIMUM RATINGS

Power Dissipation

Device Dissipation @25

°C (P

7 W (At rated pulse condition)

Voltage and Current

45 V

3.5 V

0.2 A

Temperatures

Storage Temperature

-65 to +150

°C

Operating Junction Temperature

+200

°C

PIN CONNECTION

1. Collector 2. Base

3. Emitter

4. Base

ELECTRICAL CHARACTERISTICS @ 25

°°°°C

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Collector to Emitter Breakdown

45

V

Collector to Base Breakdown

45

V

Emitter to Base Breakdown

3.5

V

Collector to Base Leakage

0.5

mA

DC – Current Gain

15

120

-

Thermal Resistance

25

°C/W

NOTES:

1. At rated output power, pulse conditions and MSC fixture

Rev. A : Oct. 2009