Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

SFT5671 __ __ __

SFT5672 __ __ __

SFT5672E __ __ __

│

│

│

│

│

│

│

│

└ Screening

__ = No Screening

TX = TX Level

TXV = TXV Level

S = S Level

│

│

│

UB = Up Bend

DB = Down Bend

M = TO-254

S1 = SMD 1

SFT5671 and SFT5672

SFT5672E

30 – 50 AMPS

90 - 130 Volts

High Power

NPN Transistors

Features:

•

•

Enhanced SOA capability and Fast Switching

•

High Power Dissipation 140 Watts

•

200

•

TX, TXV, S-Level Screening per MIL-PRF-19500

available; consult factory

•

Enhanced performance version: SFT5672E

Maximum Ratings

Symbol

Value

Units

Collector – Emitter Voltage

SFT5671

SFT5672

SFT5672E

90

120

130

Volts

Collector – Base Voltage

SFT5671

SFT5672

SFT5672E

120

150

250

Volts

Emitter – Base Voltage

7

Volts

Collector Current

SFT5671, SFT5672

SFT5672E

30

50

Amps

Base Current

10

Amps

Total Power Dissipation

140

116

175

Watts

Operating & Storage Temperature

-65 to +200

ºC

Maximum Thermal Resistance

(Junction to Case)

TO-3

TO-254

SMD 1

1.25

1.5

1.0

ºC/W

TO-3 (/3)

TO-254 (M)

SMD 1(S1)

NOTES:

1/ For Ordering Information, Price, and Availability Contact Factory.

3/ For Package Outlines Contact Factory.

4/ Up and Down Bend Configurations are Available for ‘M’ (TO-254) Packages Only.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: TR0076C

DOC