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UMIL10P Datasheet(PDF) 1 Page - Microsemi Corporation

Part # UMIL10P
Description  10 Watts, 28 Volts, Class AB UHF Communications 100 - 400 MHz
PDF  1 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

UMIL10P Datasheet(HTML) 1 Page - Microsemi Corporation

  UMIL10P Datasheet HTML 1Page - Microsemi Corporation  
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R.3.070799
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
.
UMIL10P
10 Watts, 28 Volts, Class AB
UHF Communications 100 – 400 MHz
GENERAL DESCRIPTION
The UMIL10P is a COMMON EMITTER broadband transistor specifically
intended for use in the 100-400 MHz frequency band. It may be operated in
Class AB or C.
Gold metallization and silicon diffused resistors ensure
ruggedness and high reliability.
CASE OUTLINE
55FU Style 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25
°C
28 W
Maximum Voltage and Current
Collector to Base Voltage (BVces)
55 V
Emitter to Base Voltage (BVebo)
4.0 V
Collector Current (Ic)
1.5 A
Maximum Temperatures
Storage Temperature
-65 to +150
°C
Operating Junction Temperature
+200
°C
Backside Surface is Gold Metalized
ELECTRICAL CHARACTERISTICS @ 25
°C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Power Out
F = 400 MHz
10
W
Pin
Power Input
VCC = 28 Volts, Pout = 10W
1.0
W
Pg
Power Gain
10.0
dB
η
c
Collector Efficiency
45
50
%
VSWR
Load Mismatch Tolerance
10:1
ψ
FUNCTIONAL CHARACTERISTICS @ 25
°C
BVebo
Emitter to Base Breakdown
Ie = 5 mA
4.0
V
BVces
Collector to Emitter Breakdown
Ic = 50 mA
55
V
BVceo
Collector to Emitter Breakdown
Ie = 50 mA
30
V
Cob
Output Capacitance
Vcb = 28V, F = 1 MHz
11.5
PF
hFE
DC – Current Gain
Vce = 5V, Ic = 200mA
10
150
β
θjc
Thermal Resistance
6.3
°C/W
Rev A May 1999


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