MICROCIRCUIT DATA SHEET

MNLMH6624-X REV 1A0

(Absolute Maximum Ratings)

(Note 1)

Supply Voltage (Vs)

+6 Vdc

Common Mode Input Voltage (Vcm)

V+ - V-

Differential Input Voltage (Vin)

+1.2V

Maximum Power Dissipation (Pd)

(Note 2)

1.0W

Lead Temperature

+300 C

(Soldering, 10 seconds)

Junction Temperature (Tj)

+175 C

Storage Temperature Range

-65 C < Ta < +150 C

Thermal Resistance

ThetaJa

Junction-to-ambient

CERAMIC DIP

130 C/W

(Still Air Flow)

70 C/W

(500LF/Min Air Flow)

CERAMIC SOIC

180 C/W

(Still Air Flow)

115 C/W

(500LF/Min Air Flow)

ThetaJC

17 C/W

CERAMIC DIP

20 C/W

CERAMIC SOIC

Package Weight

(Typical)

1090mg

CERAMIC DIP

220mg

CERAMIC SOIC

ESD Tolerance

(Note 3)

2000 V

ESD Rating

Note 1:

Absolute Maximum Ratings are limits beyond which damage to the device may occur.

Operating Ratings are conditions for which the device is functional, but do not

guarantee specific performance limits.

For guaranteed specifications and test

conditions see the Electrical Characteristics.

The guaranteed specifications apply

only for the test conditions listed.

Some performance characteristics may degrade

when the device is not operated within the listed test conditions.

Note 2:

The maximum power dissipation must be derated at elevated temperatures and is

dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to

ambient thermal resistance), and TA (ambient temperature).

The maximum allowable

power dissipation at any temperature is Pdmax = (Tjmax - TA) / ThetaJA or the number

given in the Absolute Maximum Ratings, whichever is lower.

Note 3:

Human body model, 100 pF discharged through 1.5K Ohms.

3