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2SC5344 Datasheet(PDF) 1 Page - Rectron Semiconductor |
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2SC5344 Datasheet(HTML) 1 Page - Rectron Semiconductor |
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1 / 2 page ![]() RECTRON SEMICONDUCTOR FEATURES MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram SOT-23 2SC5344 Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 OC ambient temperature unless otherwise specified. 0.118(3.00) 0.012(0.30) 0.020(0.50) 0.003(0.08) 0.006(0.15) 0.110(2.80) 0.019(2.00) 0.071(1.80) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) 0.043(1.10) 0.035(0.90) 0.004(0.10) 0.000(0.00) TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) 2006-3 ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) Emitter cut-off current (VEB= 5V, IC=0) DC current gain (VCE= 1V, IC= 100mA) Collector cut-off current (VCB= 35V, IE=0) Collector output capacitance (VCB= 10V, IE=0, f= 1MHZ) Collector-emitter saturation voltage (IC= 500mA, IB= 50mA) Transition frequency (VCE= 5V, IC= 10mA) CHARACTERISTICS SYMBOL UNITS - - - - 0.1 320 m A m A V V V V MHz pF Collector-emitter breakdown voltage (IC= 10mA, IB=0) Collector-base breakdown voltage (IC= 100mA, IE=0) Emitter-base breakdown voltage(IE=10mA, Ic=0) CLASSIFICATION OF hFE(1) RANK Range Marking Q 100-200 FAO V(BR)CBO V(BR)CEO V(BR)EBO IEBO hFE(1) ICBO VCE(sat) fT Cob MAX - - - - - TYP 35 30 5 - - - - 100 120 13 MIN Y 160-320 FAY 0.055(1.40) 0.047(1.20) - - 0.1 - - - 0.5 BASE EMITTER COLLECTOR * * * * Power dissipation PCM : 0.2 W (Tamb=25OC) Collector current ICM : 0.8 A Collector-base voltage V(BR)CBO : 35 V Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC 1 1 2 3 2 3 Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. |
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