RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

BAT86

SILICON PLANAR SCHOTTKY

BARRIER DIODE

FEATURES

* DO-34 Package (JEDEC)

*

*

*

*

Through-Hole Device Type Mounting

Hermetically Sealed Glass

Compression Bonded Construction

All external surfaces are corrosion resistant and leads

are readily solderable

Dimensions in inches and (millimeters)

MAX.

.165 (4.2)

1.02 (26.0)

MIN.

1.02 (26.0)

MIN.

.079 (2.0)

MAX.

DIA.

.022 (0.56)

.018 (0.46)

DIA.

RATINGS

Maximum Forward Comtinuous Current @ TA=25

Maximum Forward Comtinuous Reverse Voltage

Surge Forward Current @ tp<10ms

Junction Temperature

Storage Temperature Range

SYMBOL

BAT86

mAmps

V

200

50

Repetitive Peak Forward Current tp<1s:

δ<0.5

AmpsR

500

5

125

-65 to + 150

mAmps

UNITS

DO-34

2006-3

Forward voltage Pulse Tesx tp<300

CHARACTERISTICS

SYMBOL

UNITS

-

5.0

0.30

0.45

0.38

0.60

0.90

-

-

-

-

-

8.0

4.0

µA

V

V

pF

nS

MAX.

-

-

-

-

TYP.

50

-

-

-

-

MIN.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.