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BC808 Datasheet(PDF) 1 Page - Rectron Semiconductor |
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BC808 Datasheet(HTML) 1 Page - Rectron Semiconductor |
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1 / 2 page ![]() RECTRON SEMICONDUCTOR FEATURES MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram SOT-23 BC808 Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 OC ambient temperature unless otherwise specified. 0.118(3.00) 0.012(0.30) 0.020(0.50) 0.003(0.08) 0.006(0.15) 0.110(2.80) 0.019(2.00) 0.071(1.80) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) 0.043(1.10) 0.035(0.90) 0.004(0.10) 0.000(0.00) TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) 2006-3 ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) Emitter cut-off current (VEB= -4V, IC=0) DC current gain (VCE= -1V, IC= -100mA) DC current gain (VCE= -1V, IC= -500mA) Collector cut-off current (VCB= -30V, IE=0) Collector-emitter saturation voltage (IC= -500mA, IB= -50mA) Transition frequency (VCE= -5V, IC= -10mA, f= 50MHZ) Collector output capacitance (VCB= -10V, IE= 0, f= 1MHZ) Base - emitter voltage (VCE= -1V, IC= -500mA) CHARACTERISTICS SYMBOL UNITS - - - - - -0.1 600 m A m A V V V V V pF MHz Collector-base breakdown voltage (IC= -100mA, IE=0) Collector-emitter breakdown voltage (IC= -1mA, IB=0) Emitter-base breakdown voltage (IE= -100mA, IC=0) CLASSIFICATION OF hFE(1) RANK Range Marking 16 100-250 160-400 5E 5F V(BR)CBO V(BR)CEO V(BR)EBO VBE IEBO hFE ICBO VCE(sat) fT Cob MAX -30 -25 -5 - 40 1.2 - - - - - - 100 MIN 40 25 250-600 5G 0.055(1.40) 0.047(1.20) - -0.1 -0.7 - - - - - - TYP - 12 100 - - - BASE EMITTER COLLECTOR * * * * Power dissipation PCM : 200 mW (Tamb=25OC) Collector current ICM : 500 mA Collector-base voltage V(BR)CBO : 30 V Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC 1 1 2 3 2 3 Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. |
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