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BC848 Datasheet(PDF) 1 Page - Rectron Semiconductor |
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BC848 Datasheet(HTML) 1 Page - Rectron Semiconductor |
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1 / 2 page ![]() 66 5 K/W From junction to ambient Rth(j-a)** 500 50 30 200 BC846 200 100 200 65 45 BC847 BC848 30 80 VCES Collector Emitter Voltage VCEO 250 -55 to +150 oC Emitter Base Voltage VEBO Emitter Current - Peak Collector Current (DC) Base Current - Peak IBM Collector Current - Peak V V -IEM IC mA ICM mA DESCRIPTION SYMBOL UNITS Collector Emmitter Voltage (VBE = 0V) V V 80 50 30 VCBO 150 oC Total power dissipation up to Ptot** mA **Mounted on a ceramic substrate of 8mm x 10mm x 0.7mm Thermal Resistance Collector Base Voltage Storge Temperature Tstg mW Tamb = 25 oC Junction Temperature Tj NPN Silicon Planar Epitaxial Transistors BC846 BC847 BC848 Unit: inch (mm) Pin configuration: 1. BASE 2. EMITTER 3. COLLECTOR 1 2 3 Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise) SOT-23 SMD Package www.rectron.com 1 of 2 |
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