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BDB102 Datasheet(PDF) 1 Page - Rectron Semiconductor

Part # BDB102
Description  SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER
PDF  2 Pages
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Manufacturer  RECTRON [Rectron Semiconductor]
Direct Link  http://www.rectron.com
Logo RECTRON - Rectron Semiconductor

BDB102 Datasheet(HTML) 1 Page - Rectron Semiconductor

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SINGLE-PHASE GLASS PASSIVATED
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Good for automation insertion
* Surge overload rating - 40 amperes peak
* Ideal for printed circuit board
* Reliable low cost construction utilizing molded
* Glass passivated device
* Polarity symbols molded on body
* Mounting position: Any
* Weight: 1.0 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
BDB101
THRU
BDB107
MAXIMUM RATINGS (At TA = 25
oC unless otherwise noted)
SILICON BRIDGE RECTIFIER
Dimensions in inches and (millimeters)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
SYMBOL
VRRM
VDC
IO
IFSM
VRMS
Volts
Volts
Amps
1.0
40
UNITS
Maximum Average Forward Output Current at TA = 40
oC
50
200
400
100
600
800
1000
35
140
280
70
420
560
700
Volts
Amps
BDB101
BDB103 BDB104
BDB102
BDB105 BDB106 BDB107
50
200
400
100
600
800
1000
FEATURES
* Epoxy : UL flammability classification 94V-0
*
UL listed under the recognized component directory, file #E94233.
BDB
.240 (6.1)
.079 (2)
.300 (7.6)
.350 (8.9)
.232 (5.9)
.413 (10.5)
.398 (10.1)
.291 (7.4)
.307 (7.8)
(0.5)
.071 (1.8)
.031 (0.8)
.020
.094 (2.4)
.035 (0.9)
.135 (3.4)
.115 (2.9)
.295 (7.5)
.303 (7.7)
(8.0)
.315
MAX.
ELECTRICAL CHARACTERISTICS (At TA = 25
oC unless otherwise noted)
2005-3
REV: A
Operating and Storage Temperature Range
TJ,TSTG
-55 to + 150
0 C
DC Blocking Voltage per element
CHARACTERISTICS
VF
SYMBOL
IR
UNITS
1.1
0.5
mAmps
uAmps
Element at 1.0A DC
Maximum Forward Voltage Drop per Bridge
Volts
@TA = 25
oC
@TA = 125
oC
5.0
Maximum Forward Voltage Drop per Bridge
BDB101
BDB103 BDB104
BDB102
BDB105 BDB106 BDB107
0 C/ W
R
θ JL
R
θ JA
65
Typical Thermal Resistance from junction to ambient
Typical Thermal Resistance from junction to case
Note: “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
10


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