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LLDB3 Datasheet(PDF) 1 Page - Rectron Semiconductor |
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LLDB3 Datasheet(HTML) 1 Page - Rectron Semiconductor |
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1 / 4 page ![]() TRIGGER DIODES MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. LLDB3 AND LLDB3SEL Dimensions in inches and (millimeters) LL-34 2008-02 FEATURES * VBO: 32V/34V/40V VERSIONS * Low Breakover Current DESCRIPTION High reliability glass passivation insuring parameter stability and protection against junction contamination .059 (1.50) .055 (1.40) .138 (3.51) .120 (3.30) .020 (0.50) .014 (0.35) ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS (At TA = 25oC unless otherwise noted) (At TA = 25oC unless otherwise noted) RATING Power Dissipation (@ TA=50oC) SYMBOL P UNITS mW A mW/oC RATING Maximum Breakover Voltage Symmetry delta VBO= +VBO - -VBO C=22nF Minimum Dynamic Breakover Voltage delta I=IBO to IF=10mA (see Fig3) SYMBOL UNITS Breakover Voltage(Forward and Reverse) Volts VALUE Repetitive Peak On-State Current tp=20uA,F=100Hz ITRM 2 150 4.0 Derate Above +50oC Storage Temperature Range TSTG -40 to + 125 o C Junction Temperature 125 TJ o C VALUE Min Min Max Max 30 34 28 36 at IBO,C=22nF** VBO delta VBO Volts 5 Volts 5 Minimum Output Voltage* (see Fig 2) +/-2 Peak Breakover Current at Breakorver Voltage* C=22nF** Rise Time* (see Fig3) Leakage Current* VB=0.5VBO max (see Fig1) 25 100 1.5 10 delta V+/- VO IBO tr IB uA uS uA Volts NOTES: 1. *Electrical characteristic applicable in both forward and reverse derections. 2.**Connected in parallel with the devices. 3. "Fully ROHS compliant", "100% Sn plating (Pb-free)". LLDB3 LLDB3SEL |
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