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MM4448 Datasheet(PDF) 1 Page - Rectron Semiconductor |
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MM4448 Datasheet(HTML) 1 Page - Rectron Semiconductor |
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1 / 1 page ![]() MM4448 TECHNICAL SPECIFICATION 1N4448 mini-MELF SIGNAL DIODE RECTRON SEMICONDUCTOR ITEMS Symbol Ratings Unit Peak Reverse Voltage VRM 100 V Reverse Recovery Time trr 4 ns Power Dissipation P 500 mW Forward Current IFM 500 * mA Junction Temp. Tj (-65 to 175) °C Storage Temp. Tstg (-65 to 175) °C Items Materials Package mini MELF Case Hermetically sealed glass Lead/Finish Double stud/Solder Plating Chip Glass Passivated Mechanical Data Ratings Symbol Ratings Unit Non-Repetive Peak Reverse Voltage VRM 100 V Minimum Breakdown Voltage @IR= 100mA BV 75 V Peak Forward Surge Current @ t = 1.0s IFSM 1 * A Forward Continuous Current IFM 500 * mA Maximum Forward Voltage IF= 100mA VF 1V Maximum Reverse Current VR= 20V 25 nA VR= 75V 5 µA VR= 20V, Tj= 150 °C 30 µA Maximum Junction Capacitance VR= 0, f= 1 MHz Maximum Reverse Recovery Time IF= 10mA, VR= 6V, IR= -1mA, RL= 100 Ω Maximum Thermal Resistance RθJA 300 K / W trr 4 ns IR Cj 4 pF All Dimensions in mm Absolute Maximum Ratings (Ta = 25°C) mini-MELF 3.70 3.30 0.28 1.30 1.60 0.50 * Note: Device terminals at ambient temperature |
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