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MMST2222A Datasheet(PDF) 2 Page - Rectron Semiconductor |
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MMST2222A Datasheet(HTML) 2 Page - Rectron Semiconductor |
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2 / 2 page ![]() ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) OFF CHARACTERISTICS ON CHARACTERISTICS (1) SMALL-SIGNAL CHARACTERISTICS SWITCHING CHARACTERISTICS Chatacteristic Collector-Emitter Breakdown Voltage (IC= 10mAdc, IB= 0) Collector-Base Breakdown Voltage (IC= 10µAdc, IE= 0) Emitter-Base Breakdown Voltage (IE= 10µAdc, IC= 0) Collector Cutoff Current (VCE= 60Vdc,VEB(off)= 3.0Vdc Collector Cutoff Current (VCB= 60Vdc, IE= 0) (VCB= 60Vdc, IE= 0, TA= 125 OC) Emitter Cutoff Current (VEB= 3.0Vdc, IC= 0) Base Cutoff Current (VCE= 60Vdc, VEB(off)= 3.0Vdc DC Current Gain (IC= 100µA, VCE= 10Vdc) Collector-Emitter Saturation Voltage (IC= 150mAdc, IB= 15mAdc) (IC= 500mAdc, IB= 50mAdc) (IC= 1.0mAdc, VCE= 10Vdc) (IC= 10mAdc, VCE= 10Vdc) (IC= 150mAdc, VCE= 10Vdc) (IC= 500mAdc, VCE= 10Vdc) (IC= 10mAdc, VCE= 10Vdc,TA=-55 OC) (IC= 150mAdc, VCE= 1.0Vdc) V(BR)CEO 40 - Vdc V(BR)CBO 75 - Vdc V(BR)EBO 6.0 - Vdc Vdc Vdc ICEX ICBO IEBO IBL - 10 - 10 - - - 10 10 20 µAdc nAdc nAdc nAdc fT 300 - MHz hFE 35 - - 50 - VCE(sat) 75 - 100 300 µAdc Symbol Min Max Unit Base-Emitter Saturation Voltage (IC= 150mAdc, IB= 15mAdc) (IC= 500mAdc, IB= 50mAdc) Current-Gain-Bandwidth Product (IC= 20mAdc, VCE= 20Vdc, f= 100MHz) Cibo Cobo - 25 pF pF td tr ts tf NF - - - - - 4.0 ns dB ns - 8 225 60 10 25 Input Capacitance (VEB=0.5Vdc, IC= 0, f= 1.0MHz) Output Capacitance (IE= 0, VCB= 10Vdc, f= 1.0MHz) Noise Figure (IC= 100µAdc, VCE= 10Vdc, RS= 1.0kΩ, f= 1.0kHz) (VCC= 30Vdc, VBE(off)= 0.5Vdc, IC= 150mAdc, IB1= 15mAdc) (VCC= 30Vdc, IC= 150mAdc, IB1= IB2= 15mAdc) VBE(sat) 40 - 50 35 - - - - 0.3 1.0 0.6 - 1.2 2.0 Delay Time Rise Time Storage Time Fall Time RECTRON NOTES : 1. Short duration test pulse used to minimize self-heating effect. |
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