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MMST5551 Datasheet(PDF) 2 Page - Rectron Semiconductor |
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MMST5551 Datasheet(HTML) 2 Page - Rectron Semiconductor |
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2 / 2 page ![]() ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) OFF CHARACTERISTICS ON CHARACTERISTICS SMALL-SIGNAL CHARACTERISTICS Chatacteristic Collector-Emitter Breakdown Voltage (IC= 1.0mAdc, IB= 0) Collector-Base Breakdown Voltage (IC= 100µAdc, IE= 0) Emitter-Base Breakdown Voltage (IE= 10µAdc, IC= 0) Collector Cutoff Current (VCB= 120Vdc, IE= 0) Emitter Cutoff Current (VEB= 3Vdc, IC= 0) DC Current Gain (IC= 1mAdc, VCE= 5Vdc) Collector-Emitter Saturation Voltage (IC= 10mAdc, IB= 1mAdc) (IC= -10mAdc, VCE= 5Vdc) (IC= 50mAdc, VCE= 5Vdc) V(BR)CEO 160 - Vdc V(BR)CBO 180 - Vdc V(BR)EBO 5 - Vdc ICBO IEBO - - 50 50 Vdc nAdc fT 100 hFE 80 80 250 - - 30 - VCE(sat) - 0.15 - 0.2 nAdc Symbol Min Max Unit (IC= 50mAdc, IB= 5mAdc) Base-Emitter Saturation Voltage (IC= 10mAdc, IB= 1mAdc) Current-Gain-Bandwidth Product (IC= 10mAdc, VCE= 10Vdc, f= 100MHz) pF MHz 300 - 6 - 8 dB NF Cob Output Capacitance (VCB= 10Vdc, IE= 0, f= 1.0MHz) Noise figure (IC= 0.2mAdc, VCE= 5Vdc, f= 1.0kHz,Rg=10Ω) Vdc VBE(sat) - 1 - 1 (IC= 50mAdc, IB= 5mAdc) RECTRON |
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