EMT1 / UMT1N / IMT1A

Transistors

Rev.C

General Purpose Transistor

(Isolated Dual Transistors)

EMT1 / UMT1N / IMT1A

Features

1) Two 2SA1037AK chips in a EMT or UMT or SMT

package.

2) Mounting possible with EMT3 or UMT3 or SMT3

automatic mounting machines.

3) Transistor elements are independent,

eliminating interference.

Structure

Epitaxial planar type

PNP silicon transistor

Equivalent circuit

EMT1 / UMT1N

IMT1A

(3)

(2)

(1)

(4)

(5)

(6)

(4)

(5)

(6)

(3)

(2)

(1)

The following characteristics apply to both

Absolute maximum ratings (Ta = 25

°C)

Parameter

Symbol

Tj

Tstg

EMT1, UMT1N

IMT1A

Limits

−60

−50

−6

−150

150

−55 to +150

150 (TOTAL)

300 (TOTAL)

Unit

V

V

V

mA

°C

°C

1

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Junction temperature

Storage temperature

Collector

power

dissipation

∗1 120mW per element must not be exceeded.

∗2 200mW per element must not be exceeded.

Dimensions (Unit : mm)

ROHM : EMT6

EMT1

ROHM : UMT6

EIAJ : SC-88

UMT1N

(6) (5) (4)

(1) (2) (3)

(6) (5) (4)

(1) (2) (3)

(4)

(5)

(6)

(3)

(2)

(1)

ROHM : SMT6

EIAJ : SC-74

IMT1A

Abbreviated symbol : T1

Abbreviated symbol : T1

Abbreviated symbol : T1

Each lead has same dimensions

Each lead has same dimensions

Each lead has same dimensions