MUR140

MUR160

01/01/2007 Rev. 1.00

www.SiliconStandard.com

2

Parameter

Symbols

MUR140

MUR160

Units

Maximum repetitive peak reverse voltage

VRRM

400

600

Volts

Working peak reverse voltage

VRWM

400

600

Volts

Maximum DC blocking voltage

VDC

400

600

Volts

Maximum average forward rectified current at TA =120℃

IF(AV)

1.0

Amp

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC Method)

IFSM

35.0

Amps

Maximum instantaneous forward

voltage (Note 1)

Iat F =1.0A, TJ =25℃

at IF =1.0A, TJ =150℃

VF

1.25 1.05

Volts

Maximum instantaneous reverse

current at rated DC blocking

voltage (Note 1)

TJ =25℃

TJ =150℃

IR

5.0 150

uA uA

Maximum reverse recovery time

at IF =0.5A, IR =1.0A, I rr =0.25A

trr

50

nS

Maximum reverse recovery time

at IF =1.0A, di/dt=50A/us, VR

=30V, I rr =10%

IRM

trr

75

nS

Maximum forward recovery time at IF =1.0A,

di/dt=100A/us, recovery to 1.0V

tfr

50

nS

Typical thermal resistance junction to ambient (Note 2)

RθJA

50

℃

/W

Operating junction and storage temperature range

TJ, TSTG

-55 to +175

℃

NOTE:

1. Pulse test: tp=300us, duty cycle < 2%

2. Lead length = 3/8” on P.C. Board with 1.5” x 1.5” copper surface