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HFS2N60S Datasheet(PDF) 2 Page - SemiHow Co.,Ltd.

Part # HFS2N60S
Description  600V N-Channel MOSFET
PDF  7 Pages
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Manufacturer  SEMIHOW [SemiHow Co.,Ltd.]
Direct Link  http://www.semihow.com
Logo SEMIHOW - SemiHow Co.,Ltd.

HFS2N60S Datasheet(HTML) 2 Page - SemiHow Co.,Ltd.

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◎ SEMIHOW REV.A0,Nov 2007
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=56mH, IAS=2.0A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISD≤2.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
Electrical Characteristics T
C=25 °C unless otherwise specified
IS
Continuous Source-Drain Diode Forward Current
--
--
2.0
A
ISM
Pulsed Source-Drain Diode Forward Current
--
--
8.0
VSD
Source-Drain Diode Forward Voltage IS = 2.0 A, VGS = 0 V
--
--
1.4
V
trr
Reverse Recovery Time
IS = 2.0 A, VGS = 0 V
diF/dt = 100 A/μs
(Note 4)
--
230
--
Qrr
Reverse Recovery Charge
--
1.0
--
μC
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
VGS
Gate Threshold Voltage
VDS = VGS, ID = 250 ㎂
2.0
--
4.0
V
RDS(ON) Static Drain-Source
On-Resistance
VGS = 10 V, ID = 1.0 A
--
4.2
5.0
On Characteristics
BVDSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂
600
--
--
V
Δ
BVDSS
/ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 ㎂, Referenced to 25℃
--
0.6
--
V/℃
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
--
--
1
VDS = 480 V, TC = 125℃
--
--
10
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
100
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
Off Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
280
365
Coss
Output Capacitance
--
37
48
Crss
Reverse Transfer Capacitance
--
6.0
8.0
Dynamic Characteristics
td(on)
Turn-On Time
VDS = 300 V, ID = 2.0 A,
RG = 25 Ω
(Note 4,5)
--
9
28
tr
Turn-On Rise Time
--
25
60
td(off)
Turn-Off Delay Time
--
24
58
tf
Turn-Off Fall Time
--
28
66
Qg
Total Gate Charge
VDS = 480V, ID = 2.0 A,
VGS = 10 V
(Note 4,5)
--
6.0
8.0
nC
Qgs
Gate-Source Charge
--
1.3
--
nC
Qgd
Gate-Drain Charge
--
2.6
--
nC
Switching Characteristics
Source-Drain Diode Maximum Ratings and Characteristics



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