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SSM28G45EM Datasheet(PDF) 1 Page - Silicon Standard Corp. |
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SSM28G45EM Datasheet(HTML) 1 Page - Silicon Standard Corp. |
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1 / 4 page ![]() www.SiliconStandard.com 1 of 4 N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR High input impedance VCE 450V High peak current capability ICP 130A 3.3V gate drive E E E G C C C C SO-8 G C E SSM28G45EM 9/21/2004 Rev.2.01 Absolute Maximum Ratings Electrical Characteristics @ Tj=25 oC (unless otherwise specified) Symbol Min. Typ. Max. Units IGES - - 10 µA ICES - - 10 µA VCE(sat) VGE(th) Qg - 74 120 nC Qge - 8 - nC Qgc - 34 - nC td(on) - 20 - ns tr - 100 - ns td(off) - 400 - ns tf - 3 - µs Cies - 3020 4830 pF Coes - 220 - pF Cres - 50 - pF RthJA 1 - - 50 °C/W Notes: 1.Surface mounted on 1 in 2 copper pad of FR4 board ; 125°C/W when mounted on min. copper pad. V 2.5 VCC=200V V Gate-Emitter Voltage Gate-Emitter Charge Operating Junction Temperature Range -55 to 150 °C -55 to 150 °C W Parameter Storage Temperature Range Pulsed Collector Current Parameter Maximum Power Dissipation VGE ICP VGEP Pulsed Gate-Emitter Voltage PD @ TC=25°C 1 450 ± 6 130 ± 8 Symbol VCE Rating Collector-Emitter Voltage Units V A Reverse Transfer Capacitance VCE=450V, VGE=0V VGE=3.3V, ICP=130A (Pulsed) - 3.8 6 V VCE=VGE, IC=250µA - - 1 V IC=40A VCE=360V VGE=5V VCE=25V Test Conditions Collector-Emitter Saturation Voltage Gate Threshold Voltage Total Gate Charge Gate-Emitter Leakage Current Collector-Emitter Leakage Current (Tj=25°C) VGE=± 6V, VCE=0V TSTG Turn-off Delay Time VGE=0V IC=15A RG=10Ω Rise Time TJ Gate-Collector Charge Turn-on Delay Time Thermal Resistance Junction-Ambient VGE=4.5V Fall Time Input Capacitance Output Capacitance f=1.0MHz |
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