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N-channel Enhancement-mode Power MOSFET

Low gate-charge

100V

Simple drive requirement

15m

Ω

Fast switching

72A

DESCRIPTION

G

D

S

G D

S

TO-263 (S)

G

D

S

TO-220 (P)

The SSM75T10GS is in a TO-263 package, which is widely used for

commercial and industrial surface mount applications, and is well suited

for low voltage applications such as DC/DC converters. The through-hole

version, the SSM75T10GP in TO-220, is available for low-footprint vertical

mounting. These devices are manufactured with an advanced process,

providing improved on-resistance and switching performance.

ABSOLUTE MAXIMUM RATINGS

Symbol

Units

V

V

A

W/°C

Symbol

Value

Units

Rthj-c

Thermal Resistance Junction-case

Max.

0.9

°C/W

Rthj-a

Thermal Resistance Junction-ambient

Max.

62

°C/W

Parameter

Rating

Drain-Source Voltage

100

Gate-Source Voltage

±20

3

72

A

45

A

Pulsed Drain Current

1

260

Total Power Dissipation

138

W

-55 to 150

°C

Operating Junction Temperature Range

-55 to 150

°C

Linear Derating Factor

1.11

THERMAL DATA

Parameter

Storage Temperature Range

SSM75T10GP,S

2/16/2005 Rev.1.1

Pb-free, RoHS compliant.