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SSM2306N Datasheet(PDF) 2 Page - Silicon Standard Corp.

Part # SSM2306N
Description  N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
PDF  4 Pages
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Manufacturer  SSC [Silicon Standard Corp.]
Direct Link  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SSM2306N Datasheet(HTML) 2 Page - Silicon Standard Corp.

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Rev.2.02 3/16/2004
SSM2306N
Electrical Characteristics @ Tj=25
oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
20
-
-
V
∆BV
DSS/∆ Tj
Breakdown Voltage Temperature Coefficient
Reference to 25°C, ID=1mA
-
0.1
-
V/°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=5.5A
-
-
27
m
Ω
VGS=4.5V, ID=5.3A
-
-
32
m
Ω
VGS=2.5V, ID=2.6A
-
-
50
m
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
0.5
-
-
V
gfs
Forward Transconductance
VDS=5V, ID=5.3A
-
13
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=20V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=55
oC)
VDS=16V ,VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=-
-
nA
Qg
Total Gate Charge
2
ID=5.3A
-
8.7
-
nC
Qgs
Gate-Source Charge
VDS=10V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.6
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
6
-
ns
tr
Rise Time
ID=1A
-
14
-
ns
td(off)
Turn-off Delay Time
RG=2Ω ,VGS=10V
-
18.4
-
ns
tf
Fall Time
RD=15Ω
-
2.8
-
ns
Ciss
Input Capacitance
VGS=0V
-
575
-
pF
Coss
Output Capacitance
VDS=10V
-
120
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
92.3
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=1.2A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=5A, VGS=0V,
-
16.8
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
11
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2 copper pad of FR4 board ; 270°C/W when mounted on min. copper pad.
± 12V
±100



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