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SSM4575M Datasheet(PDF) 5 Page - Silicon Standard Corp. |
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SSM4575M Datasheet(HTML) 5 Page - Silicon Standard Corp. |
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5 / 7 page ![]() www.SiliconStandard.com 5 of 7 SSM4575M Rev.1.01 7/05/2004 N-channel Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off)t f VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 35 Q G , Total Gate Charge (nC) I D =5A V DS =48V 100 1000 10000 1 5 9 131721 2529 V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =135 oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 1 10 100 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) T A =25 o C Single Pulse 1ms 10ms 100ms 1s DC |
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