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SSM4800M Datasheet(PDF) 1 Page - Silicon Standard Corp. |
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SSM4800M Datasheet(HTML) 1 Page - Silicon Standard Corp. |
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1 / 6 page ![]() www.SiliconStandard.com 1 of 6 SSM4800M N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-Resistance BV DSS 25V Fast Switching R DS(ON) 18mΩ Simple Drive Requirement I D 9A Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-amb Thermal Resistance Junction-ambient Max. 50 ℃/W Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.02 Thermal Data Parameter Storage Temperature Range -55 to 150 Pulsed Drain Current 1 40 Total Power Dissipation 2.5 Continuous Drain Current, VGS @ 10V 9 Continuous Drain Current, VGS @ 10V 7 Drain-Source Voltage 25 Gate-Source Voltage Parameter Rating Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM4800M is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for low-voltage applications such as DC/DC converters. G D S ± 20 S S S G D D D D SO-8 G D S Rev.2.01 6/26/2003 |
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