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SSM4920M

N-CHANNEL ENHANCEMENT-MODE

POWER MOSFET

Simple Drive Requirement

25V

Low On-resistance

25mΩ

Fast Switching

7A

Description

Absolute Maximum Ratings

Symbol

Parameter

Units

Drain-Source Voltage

V

Gate-Source Voltage

V

Continuous Drain Current

3

A

Continuous Drain Current

3

A

Pulsed Drain Current

1,4

A

Total Power Dissipation

W

Linear Derating Factor

W/℃

Storage Temperature Range

℃

Operating Junction Temperature Range

℃

Symbol

Value

Unit

Rthj-amb

Thermal Resistance Junction-ambient

Max.

62.5

℃/W

-55 to 150

7

5.7

20

25

2

0.016

-55 to 150

Parameter

Thermal Data

Rating

Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-

effectiveness.

The SO-8 package is widely preferred for all commercial and

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters.

S1

G1

S2

G2

D1

D1

D2

D2

SO-8

G2

D2

S2

G1

D1

S1

± 20

Rev.2.01 6/26/2003