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SSM7002KGEN Datasheet(PDF) 2 Page - Silicon Standard Corp.

Part # SSM7002KGEN
Description  N-channel Enhancement-mode Power MOSFET
PDF  5 Pages
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Manufacturer  SSC [Silicon Standard Corp.]
Direct Link  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SSM7002KGEN Datasheet(HTML) 2 Page - Silicon Standard Corp.

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ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified)
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-source breakdown voltage
VGS=0V, ID=250uA
60
-
-
V
∆BV
DSS/
∆Tj
Breakdown voltage temperature coefficient
Reference to 25°C, ID=1mA
-
0.06
-
V/°C
RDS(ON)
Static drain-source on-resistance
VGS=10V, ID=500mA
-
-
2
Ω
VGS=4.5V, ID=200mA
-
-
4
Ω
VGS(th)
Gate threshold voltage
VDS=VGS, ID=250uA
1
-
2.5
V
gfs
Forward transconductance
VDS=10V, ID=600mA
-
0.6
-
S
IDSS
Drain-source leakage current
V
DS=60V, VGS=0V
-
-
10
uA
VDS=48V ,VGS=0V, Tj = 70°C
-
-
100
uA
IGSS
Gate-source leakage current
VGS=±20V
-
-
±30
uA
Qg
Total gate charge
2
ID=0.6A
-
1
1.6
nC
Qgs
Gate-source charge
VDS=50V
-
0.5
-
nC
Qgd
Gate-drain ("Miller") charge
VGS=4.5V
-
0.5
-
nC
td(on)
Turn-on delay time
2
VDS=30V
-
12
-
ns
tr
Rise time
ID=0.6A
-
10
-
ns
td(off)
Turn-off delay time
RG=3.3Ω , VGS=10V
-
56
-
ns
tf
Fall time
RD=52Ω
-
29
-
ns
Ciss
Input capacitance
VGS=0V
-
32
50
pF
Coss
Output capacitance
VDS=25V
-
8
-
pF
Crss
Reverse transfer capacitance
f=1.0MHz
-
6
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward voltage
2
IS=1.2A, VGS=0V
-
-
1.2
V
SSM7002KGEN
6/16/2006 Rev.3.01



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