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SSM7002KGEN Datasheet(PDF) 2 Page - Silicon Standard Corp. |
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SSM7002KGEN Datasheet(HTML) 2 Page - Silicon Standard Corp. |
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2 / 5 page ![]() www.SiliconStandard.com 2 of 5 ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified) Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C. 2.Pulse width <300us, duty cycle <2%. Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-source breakdown voltage VGS=0V, ID=250uA 60 - - V ∆BV DSS/ ∆Tj Breakdown voltage temperature coefficient Reference to 25°C, ID=1mA - 0.06 - V/°C RDS(ON) Static drain-source on-resistance VGS=10V, ID=500mA - - 2 Ω VGS=4.5V, ID=200mA - - 4 Ω VGS(th) Gate threshold voltage VDS=VGS, ID=250uA 1 - 2.5 V gfs Forward transconductance VDS=10V, ID=600mA - 0.6 - S IDSS Drain-source leakage current V DS=60V, VGS=0V - - 10 uA VDS=48V ,VGS=0V, Tj = 70°C - - 100 uA IGSS Gate-source leakage current VGS=±20V - - ±30 uA Qg Total gate charge 2 ID=0.6A - 1 1.6 nC Qgs Gate-source charge VDS=50V - 0.5 - nC Qgd Gate-drain ("Miller") charge VGS=4.5V - 0.5 - nC td(on) Turn-on delay time 2 VDS=30V - 12 - ns tr Rise time ID=0.6A - 10 - ns td(off) Turn-off delay time RG=3.3Ω , VGS=10V - 56 - ns tf Fall time RD=52Ω - 29 - ns Ciss Input capacitance VGS=0V - 32 50 pF Coss Output capacitance VDS=25V - 8 - pF Crss Reverse transfer capacitance f=1.0MHz - 6 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward voltage 2 IS=1.2A, VGS=0V - - 1.2 V SSM7002KGEN 6/16/2006 Rev.3.01 |
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