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P-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Simple drive requirement

-60V

Low on-resistance

90m

Ω

Fast switching characteristics

-4A

Description

Absolute Maximum Ratings

Symbol

Units

V

V

A

W/°C

Symbol

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient

3

Max.

50

°C/W

Rating

-60

-4

A

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

3

Continuous Drain Current

3

-3.2

A

Pulsed Drain Current

1

-20

2.5

W

-55 to 150

°C

Operating Junction Temperature Range

-55 to 150

°C

Linear Derating Factor

0.02

Storage Temperature Range

Thermal Data

Parameter

Total Power Dissipation

± 25

Advanced Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SSM9575M is in the SO-8 package, which is widely preferred for

commercial and industrial surface mount applications, and is well suited

for low voltage applications such as DC/DC converters.

D

S

S

S

S

G

D

D

D

D

SO-8

G

SSM9575M/GM

12/02/2004 Rev.2.01

This device is available with Pb-free lead finish (second-level interconnect) as SSM9575GM.