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SSM9916H Datasheet(PDF) 1 Page - Silicon Standard Corp.

Part # SSM9916H
Description  N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
PDF  6 Pages
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Manufacturer  SSC [Silicon Standard Corp.]
Direct Link  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SSM9916H Datasheet(HTML) 1 Page - Silicon Standard Corp.

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SSM9916H,J
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low on-resistance
BV DSS
18V
Capable of 2.5V gate drive
RDS(ON)
25m
Ω
Low drive current
ID
35A
Simple drive requirement
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID @ TC=25°C
ID @ TC=125°C
IDM
A
PD @ TC=25°C
W/°C
TSTG
TJ
Symbol
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
2.5
°C/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
°C/W
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
50
W
-55 to 150
°C
Operating Junction Temperature Range
-55 to 150
°C
Linear Derating Factor
0.4
Continuous Drain Current, VGS @ 4.5V
16
A
Pulsed Drain Current
1
90
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
35
A
Parameter
Rating
Drain-Source Voltage
18
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
± 12
G
D
S
TO-252(H)
G
D
S
TO-251(J)
G
D
S
Rev.2.02 1/29/2004


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