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SSM9918H Datasheet(PDF) 1 Page - Silicon Standard Corp. |
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SSM9918H Datasheet(HTML) 1 Page - Silicon Standard Corp. |
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1 / 6 page  www.SiliconStandard.com 1 of 6 SSM9918H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance BV DSS 20V Capable of 2.5V gate drive R DS(ON) 14mΩ Low drive current I D 45A Surface mount package Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=125℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-c Thermal Resistance Junction-case Max. 2.6 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W Thermal Data Parameter Storage Temperature Range Total Power Dissipation 48 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.38 Continuous Drain Current, VGS @ 4.5V 20 Pulsed Drain Current 1 140 Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V 45 Parameter Rating Drain-Source Voltage 20 Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. ± 12 G D S TO-251(J) G D S TO-252(H) G D S Rev.2.01 6/26/2003 |
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