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SSM9926EM Datasheet(PDF) 1 Page - Silicon Standard Corp.

Part # SSM9926EM
Description  N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
PDF  6 Pages
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Manufacturer  SSC [Silicon Standard Corp.]
Direct Link  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SSM9926EM Datasheet(HTML) 1 Page - Silicon Standard Corp.

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SSM9926EM
N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Low on-resistance
BV DSS
20V
Capable of 2.5V gate drive
RDS(ON)
30m
Ω
Low drive current
I D
6A
Surface-mount package
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID @ TA=25°C
ID @ TA=70°C
IDM
A
PD @ TA=25°C
W/°C
TSTG
TJ
Symbol
Value
Unit
Rthj-amb
Thermal Resistance Junction-ambient
Max.
62..5
°C/W
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
2
W
-55 to 150
°C
Operating Junction Temperature Range
-55 to 150
°C
Linear Derating Factor
0.016
Continuous Drain Current
3
4.8
A
Pulsed Drain Current
1,2
20
Gate-Source Voltage
±12
Continuous Drain Current
3
6
A
Parameter
Rating
Drain-Source Voltage
20
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
S1
G1
S2
G2
D1
D1
D2
D2
SO-8
S1
G1
D1
S2
G2
D2
Rev.2.02 1/29/2004


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