SSM9972GI datasheet(4/5 Pages) SSC

Part #	SSM9972GI

Description	N-channel Enhancement-mode Power MOSFET

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	SSC [Silicon Standard Corp.]

Direct Link	http://www.siliconstandard.com

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SSM9972GI

9/20/2006 Rev.3.1

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Transfer Characteristics

Fig 12. Gate Charge Waveform

4.5V

QGS

QGD

Charge

020

Q G , Total Gate Charge (nC)

V DS =48V

V DS =38V

V DS =30V

I D =23 A

100

V GS , Gate-to-Source Voltage (V)

T j =150

o C

T j =25

o C

V DS =5V

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

t , Pulse Width (s)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthjc + TC

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

0.1

100

1000

0.1

100

1000

V DS , Drain-to-Source Voltage (V)

T C =25

o C

Single Pulse

100us

1ms

10ms

100ms

100

1000

10000

V DS , Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

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