BCP53 datasheet(1/1 Pages) ZETEX

Part #	BCP53

Description	PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

PDF	1 Pages

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Manufacturer	ZETEX [Zetex Semiconductors]

Direct Link	http://www.diodes.com/

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SOT223 PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 3 AUGUST 1995

7

FEATURES

* Suitable for AF drivers and output stages

* High collector current and Low VCE(sat)

COMPLEMENTARY TYPE BCP56

PARTMARKING DETAILS

BCP53

BCP53 10

BCP53 16

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

-100

V

Collector-Emitter Voltage

VCEO

-80

V

Emitter-Base Voltage

VEBO

-5

V

Peak Pulse Current

ICM

-1.5

A

Continuous Collector Current

IC

-1

A

Power Dissipation at Tamb=25°C

Ptot

2W

Operating and Storage Temperature

Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

TYP.

MAX. UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO

-100

V

IC=-100µA

Collector-Emitter

Breakdown Voltage

V(BR)CEO

-80

V

IC=- 10mA *

Emitter-Base

Breakdown Voltage

V(BR)EBO

-5

V

IE=-10µA

Collector Cut-Off

Current

ICBO

-100

-20

nA

µ

A

VCB=-30V

VCB=-30V, Tamb=150°C

Emitter Cut-Off Current IEBO

-10

µ

A

VEB=-5V

Collector-Emitter

Saturation Voltage

VCE(sat)

-0.5

V

IC=-500mA, IB=-50mA*

Base-Emitter Turn-On

Voltage

VBE(on)

-1.0

V

IC=-500mA, VCE=-2V*

Static Forward Current

Transfer Ratio

hFE

BCP53-10

BCP53-16

40

25

63

100

160

250

160

250

IC=-150mA, VCE=-2V*

IC=-500mA, VCE=-2V*

IC=-150mA, VCE=-2V*

Transition Frequency

fT

125

MHz

IC=-50mA, VCE=-10V,

f=100MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

BCP53

C

E

B

3 - 15

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