BCP68 datasheet(1/1 Pages) ZETEX

Part #	BCP68

Description	NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

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Manufacturer	ZETEX [Zetex Semiconductors]

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SOT223 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 3 FEBRUARY 1996

7

FEATURES

* Suitable for AF drivers and output stages

* High collector current and Low VCE(sat)

COMPLEMENTARY TYPE BCP69

PARTMARKING DETAIL

BCP68

BCP68 25

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

25

V

Collector-Emitter Voltage

VCEO

20

V

Emitter-Base Voltage

VEBO

5V

Peak Pulse Current

ICM

2A

Continuous Collector Current

IC

1A

Power Dissipation at Tamb=25°C

Ptot

2W

Operating and Storage Temperature

Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

TYP.

MAX. UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO

25

V

IC=10µA

Collector-Emitter

Breakdown Voltage

V(BR)CEO

20

V

IC= 30mA *

Emitter-Base

Breakdown Voltage

V(BR)EBO

5V

IE=10µA

Collector Cut-Off

Current

ICBO

100

10

nA

µ

A

VCB=25V

VCB=25V, Tamb=150°C

Emitter Cut-Off Current IEBO

10

µ

A

VEB=5V

Collector-Emitter

Saturation Voltage

VCE(sat)

0.5

V

IC=1A, IB=100mA*

Base-Emitter Turn-On

Voltage

VBE(on)

0.6

1.0

V

IC=5A, VCE=10V*

IC=1A, VCE=1V*

Static Forward Current

Transfer Ratio

hFE

BCP68

BCP68-25

50

63

160

250

400

IC=5mA, VCE=10V*

IC=500mA, VCE=1V*

Transition Frequency

fT

100

MHz

IC=100mA, VCE=5V,

f=100MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

For typical characteristics graphs see FMMT449 datasheet.

BCP68

C

E

B

3 - 19

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