BCV49 datasheet(1/1 Pages) ZETEX

Part #	BCV49

Description	NPN SILICON PLANAR DARLINGTON TRANSISTOR

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Manufacturer	ZETEX [Zetex Semiconductors]

Direct Link	http://www.diodes.com/

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SOT89 NPN SILICON PLANAR

DARLINGTON TRANSISTOR

ISSUE 3 – SEPTEMBER 1995

COMPLEMENTARY TYPE –

BCV48

PARTMARKING DETAILS –

EG

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

80

V

Collector-Emitter Voltage

VCEO

60

V

Emitter-Base Voltage

VEBO

10

V

Peak Pulse Current

ICM

800

mA

Continuous Collector Current

IC

500

mA

Power Dissipation at Tamb=25°C

Ptot

1W

Operating and Storage Temperature

Range

Tj:Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO

80

V

IC=100µA

Collector-Emitter

Breakdown Voltage

V(BR)CEO

60

V

IC=10mA*

Emitter-Base

Breakdown Voltage

V(BR)EBO

10

V

IE=10µA

Collector Cut-Off

Current

ICBO

100

10

nA

µA

VCB=60V

VCB=60V, Tamb=150°C

Emitter Cut-Off Current IEBO

100

nA

VEB=4V

Collector-Emitter

Saturation Voltage

VCE(sat)

1V

IC=100mA, IB=0.1mA*

Base-Emitter

Saturation Voltage

VBE(sat)

1.5

V

IC=100mA, IB=0.1mA*

Static Forward Current

Transfer Ratio

hFE

2000

4000

10000

2000

IC=100µA, VCE=1V†

IC=10mA, VCE=5V*

IC=100mA, VCE=5V*

IC=500mA, VCE=5V*

Transition Frequency

fT

170

MHz

IC=50mA, VCE=5V

f = 20MHz

Output Capacitance

Cobo

3.5

pF

VCB=10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤2%

For typical graphs see FMMT38A datasheet

† Periodic Sample Test Only.

Spice parameter data is available upon request for this device

BCV49

C

B

E

SOT89

3 - 26

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