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BCW66 Datasheet(PDF) 2 Page - Zetex Semiconductors

Part # BCW66
Description  NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
PDF  2 Pages
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Manufacturer  ZETEX [Zetex Semiconductors]
Direct Link  http://www.diodes.com/
Logo ZETEX - Zetex Semiconductors

BCW66 Datasheet(HTML) 2 Page - Zetex Semiconductors

  BCW66 Datasheet HTML 1Page - Zetex Semiconductors BCW66 Datasheet HTML 2Page - Zetex Semiconductors  
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V(BR)CEO 45
V
ICEO=10mA
V(BR)CES 75
V
IC=10
µA
Emitter-Base Breakdown Voltage
V(BR)EBO
5V
IEBO =10µA
Collector-Emitter
Cut-off Current
ICES
20
20
nA
µA
VCES = 45V
VCES= 45V,Tamb=150°C
Emitter-Base Cut-Off Current
IEBO
20
nA
VEBO =4V
Collector-Emitter Saturation
Voltage
VCE(sat)
0.3
0.7
V
V
IC=100mA, IB = 10mA
IC= 500mA, IB = 50mA*
Base-Emitter Saturation Voltage
VBE(sat)
2V
IC=500mA, IB=50mA*
Static
Forward
Current
Transfer
BCW66F hFE
75
100
35
160
250
IC= 10mA, VCE
= 1V
IC=100mA, VCE= 1V*
IC=500mA, VCE= 2V*
BCW66G hFE
110
160
60
250
400
IC= 10mA, VCE
= 1V
IC=100mA, VCE= 1V*
IC=500mA, VCE= 2V*
BCW66H hFE
180
250
100
350
630
IC= 10mA, VCE
= 1V
IC=100mA, VCE= 1V*
IC=500mA, VCE= 2V*
Transition Frequency
fT
100
MHz IC =20mA, VCE =10V
f = 100MHz
Output Capacitance
Cobo
8
12
pF
VCB =10V, f =1MHz
Input Capacitance
Cibo
80
pF
VEB =0.5V, f =1MHz
Noise Figure
N
2
10
dB
IC= 0.2mA, VCE= 5V
RG =1kΩ
Switching times:
Turn-On Time
Turn-Off Time
ton
toff
100
400
ns
ns
IC=150mA
IB1=- IB2 =15mA
RL=150Ω
Spice parameter data is available upon request for this device
*Measured under pulsed conditions.
BCW66
TBA



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